page 1 qw -bsc13 rev :a comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. CDBJFSC10650-G rohs device circuit diagram maximum rating (at t a =25c unless otherwise noted) reverse v oltage: 650 v forward current: 10 a parameter unit repetitive peak reverse voltage dc blocking voltage t ypical continuous forward current non-repetitive peak forward surge current power dissipation t ypical thermal resistance operating junction temperature range sym bol v rrm v dc i fsm p tot r jc t j 650 100 39.4 17.1 3.81 -55 ~ +175 v v a a w c/w c storage temperature range t stg -55 ~ +175 c v alue 650 t c = 120c 10 repetitive peak forward surge current i frm 50 a conditions t c = 25c, tp = 10ms half sine wave, d = 0.3 t c = 25c, tp = 10ms half sine wave t = 2 5 c c t = 1 10c c junction to case surge peak reverse voltage v rsm 650 v k(1) a(2) k(3) t o-220f d im e n s io n s in in c h e s a n d ( m il li m e t e r ) 0.516(13.10) 0.539(13.70) 0.100(2.55) 0.112(2.85) 0.602(15.30) 0.587(14.90) 0.130(3.30) 0.118(3.00) 0.388( 9.85) 0.404(10.25) 0.031(0.80) 0.020(0.50) 0 . 0 5 5 ( 1 . 4 0 ) 0 . 0 3 1 ( 0 . 8 0 ) 0 . 0 2 0 ( 0 . 5 0 ) 0 . 0 4 3 ( 1 . 1 0 ) 0 . 0 3 9 ( 1 . 0 0 ) 0 . 0 2 4 ( 0 . 6 0 ) 0.130(3.30) 0.154(3.90) 0.264(6.70) 0.248(6.30) 0 . 2 0 1 ( 5 . 1 0 ) 0.118(3.00) 0.126(3.20) 0.173(4.40) 0.185(4.70) 0.098(2.50) 0.110(2.80) 0 . 1 0 0 ( 2 . 5 5 ) features - rated to 650v at 10 amps - short recovery time. - high speed switching possible. - t emperature independent switching behaviour . - high temperature operation. - high frequency operation. - positive . temperature coef ficient on vf silicon carbide power schottky diode
electrical characteristics (at t a =25c unless otherwise noted) parameter conditions symbol t yp max unit t ypical characteristics ( ) CDBJFSC10650-G page 2 pf c t otal capacitance t otal capacitive charge forward voltage v r = 0v , t j = 25c , f = 1 mh z a v r = 400v , t j = 150c 1.7 100 v f i f = 10 a , t j = 25c i f = 10 a , t j = 175c v r = 650v , t j = 25c v r = 650v , t j = 175c i r v v r = 200v , t j = 25c , f = 1 mh z nc 1.48 fig.4 - capacitance vs. reverse v oltage reverse current q c = c(v) dv vr 0 q c 1.7 72 710 20 30 36 qw -bsc13 rev :a comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. case t empature, t c (c) f o r w a r d c u r r e n t , i f ( a ) fig.3 - current derating 175 fig.1 - forward characteristics f o r w a r d c u r r e n t , i f ( a ) forward v oltage, v f (v) 0 1 4 2.0 0 1.5 2.5 2 3 5 1.0 0.5 6 7 10 9 8 t j =75c t j =125c t j =25c t=175c j fig.2 - reverse characteristics r e v e r s e c u r r e n t , i r ( m a ) reverse v oltage, v r (v) 0 0.032 0.088 0 200 400 800 0.040 0.056 100 300 600 500 700 0.008 0.048 0.064 0.016 0.024 0.080 0.072 t=175c j t=125c j t j =25c t j =75c c a p a c i t a n c e b e t w e e n t e r m i n a l s , c j ( p f ) reverse v oltage, v r (v) 100 200 250 750 0 400 0.01 0.1 1 10 100 1000 50 150 300 350 450 500 550 600 650 700 150 75 125 70 30 10 0 50 100 25 20 40 50 60 10% duty 30% duty 50% duty 70% duty d.c. silicon carbide power schottky diode
page 3 qw -bsc13 rev :a comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. silicon carbide power schottky diode jfsc10650 c part number jfsc10650 marking code marking code cdbjfc10650-g marking code standard packaging c a s e t y p e t o - 2 2 0 f 5 0 t u b e ( p c s ) t u b e p a c k 1 , 0 0 0 b o x ( p c s )
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